PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
10. Revision history
Table 6:
9397 750 09156
Product data
Rev Date
01
20020426
Revision history
CPCN
-
Description
Product data; initial version
Rev. 01 — 26 April 2002
N-channel enhancement mode field-effect transistor
PSMN004-60P/60B
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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