BUK9604-40A,118 NXP Semiconductors, BUK9604-40A,118 Datasheet - Page 6
![MOSFET N-CH 40V 75A SOT404](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK9604-40A,118
Manufacturer Part Number
BUK9604-40A,118
Description
MOSFET N-CH 40V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9E04-40A127.pdf
(15 pages)
Specifications of BUK9604-40A,118
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
128nC @ 5V
Input Capacitance (ciss) @ Vds
8260pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056694118
BUK9604-40A /T3
BUK9604-40A /T3
BUK9604-40A /T3
BUK9604-40A /T3
Philips Semiconductors
Table 5:
T
9397 750 08649
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
R DSon
I D
function of drain-source voltage; typical values.
of drain current; typical values.
(m )
(A)
10
400
350
300
250
200
150
100
8
6
4
2
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
50
0
0
0
p
10
= 300 s
8
V GS = 3 V
100
2
7
6
V GS = 5 V
3.2
…continued
4
200
3.4
3.6
6
3.8
300
4
I D (A)
8
Conditions
I
Figure 15
I
V
V DS (V)
S
S
GS
10
5
= 40 A; V
= 20 A; dI
400
= 10 V; V
Rev. 01 — 24 October 2001
10
3
2.2
4
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
1.6
1.2
0.8
0.4
a
5
4
3
2
2
0
---------------------------- -
R
-60
3
DSon 25 C
R
BUK95/96/9E04-40A
DSon
D
Min
-
-
-
= 25 A
6
0
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
0.85
260
531
60
9
120
12
V GS (V)
T j (
Max
1.2
-
-
o
03aa27
C)
180
15
Unit
V
ns
nC
6 of 15