BUK9609-75A,118 NXP Semiconductors, BUK9609-75A,118 Datasheet - Page 3

MOSFET N-CH 75V 75A D2PAK

BUK9609-75A,118

Manufacturer Part Number
BUK9609-75A,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9609-75A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
8840pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056283118
BUK9609-75A /T3
BUK9609-75A /T3
NXP Semiconductors
BUK9609-75A_3
Product data sheet
Fig 1. Normalized continuous drain current as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(%)
I
der
120
80
40
0
function of mounting base temperature
0
50
1000
100
I D
10
(A)
1
1
P
100
t p
T
δ
R DSon = V DS / I D
=
150
t p
T
t
T
mb
03aa24
(°C)
Rev. 03 — 22 September 2008
200
D.C.
10
Fig 2. Normalized total power dissipation as a
P
(%)
der
120
80
40
0
function of mounting base temperature
0
N-channel TrenchMOS logic level FET
50
BUK9609-75A
100
V DS (V)
03nb44
t p = 10 us
100 us
1 ms
10 ms
100 ms
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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