BUK7611-55A,118 NXP Semiconductors, BUK7611-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7611-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7611-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3093pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055878118; BUK7611-55A /T3; BUK7611-55A /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7611-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
50
100
150
Conditions
T
R
T
see
T
T
see
T
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
T
j
mb
mb
mb
mb
mb
GS
GS
mb
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 65 A; V
Figure 3
Figure 3
03aa24
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
(°C)
= 10 V; T
= 20 kΩ
200
Rev. 02 — 16 June 2010
sup
j
≤ 175 °C
j(init)
p
GS
≤ 55 V; R
≤ 10 µs; pulsed;
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
Fig 2.
= 25 °C
GS
P
(%)
der
120
= 50 Ω;
80
40
0
Figure
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 1
N-channel TrenchMOS standard level FET
1;
50
BUK7611-55A
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
Max
55
55
20
75
61
347
166
175
75
347
211
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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