BUK7510-55AL,127 NXP Semiconductors, BUK7510-55AL,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7510-55AL,127
• Description: MOSFET N-CH TRENCH 55V TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7510-55AL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6280pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 124 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 122 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059076127

NXP Semiconductors
BUK7510-55AL_3
Product data sheet
Fig 1.
Fig 3.
150
(A)
100
10
(A)
10
I
I
D
50
10
D
0
3
2
1
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
(1)
50
Limit R
(1)
DSon
100
= V
DS
/ I
D
150
T
003aaa726
mb
( ° C)
200
Rev. 03 — 4 August 2009
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
50
V
DS
BUK7510-55AL
(V)
100
150
t
100 μ s
1 ms
10 ms
100 ms
p
© NXP B.V. 2009. All rights reserved.
= 10 μ s
T
003aaa737
mb
03aa16
(°C)
10
200
2
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