BUK7510-55AL NXP Semiconductors, BUK7510-55AL Datasheet
BUK7510-55AL
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BUK7510-55AL Summary of contents
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... BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 03 — 4 August 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Plastic single-ended package; heatsink mounted; 1 mounting hole; SC-46 3-lead TO-220AB BUK7510-55AL_3 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 03 — 4 August 2009 BUK7510-55AL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...
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... °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) see Figure 4 Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET Min Max - - [1][2] - 122 Figure 3 - ...
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... N-channel TrenchMOS standard level FET 003aaa726 120 P der (%) 150 200 0 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 Rev. 03 — 4 August 2009 BUK7510-55AL 03aa16 50 100 150 200 T (°C) mb 003aaa737 = 10 μ 100 μ 100 (V) DS © ...
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... I AV (A) ( Conditions vertical in still air see Figure Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET 003aaa739 ˚C j 150 ˚C 10 (ms) Min Typ Max - 0.25 0.5 003aaa734 δ ...
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... ° ° see Figure /dt = -100 A/µ ° Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 0.05 10 ...
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... I D (A) 100 (A) D Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 03 — 4 August 2009 BUK7510-55AL 003aaa731 ( 100 200 300 400 I (A) D 003aaa733 = 175 ° ° ...
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... Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aaa730 2 a 1.5 1 0 (V) GS Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET 03aa35 min typ max (V) GS 03ne89 0 60 120 ( ° © ...
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... Fig 15. Gate-source voltage as a function of gate charge; typical values 8000 C (pF) C iss 6000 C oss 4000 C rss 2000 Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET 003aaa735 100 Q (nC) G 003aaa738 (V) DS © NXP B.V. 2009. All rights reserved. ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. ...
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... BUK75_7610_55AL_1 20050331 BUK7510-55AL_3 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Rev. 03 — 4 August 2009 BUK7510-55AL Supersedes BUK7510-55AL_2 BUK75_7610_55AL_1 - © NXP B.V. 2009. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 4 August 2009 BUK7510-55AL N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7510-55AL_3 All rights reserved. Date of release: 4 August 2009 ...