BUK9608-55B,118 NXP Semiconductors, BUK9608-55B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9608-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057716118::BUK9608-55B /T3::BUK9608-55B /T3

NXP Semiconductors
BUK9608-55B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
10
V
DD
= 14 V
20
30
V
(A)
I
S
DD
100
75
50
25
0
= 44 V
0.0
40
All information provided in this document is subject to legal disclaimers.
Q
G
03nn48
(nC)
T
50
j
= 175 °C
Rev. 04 — 4 May 2010
0.5
Fig 14. Input, output and reverse transfer capacitances
T
j
(pF)
= 25 °C
1.0
C
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
V
−2
SD
(V)
03nn47
N-channel TrenchMOS logic level FET
1.5
10
−1
C oss
C rss
C iss
BUK9608-55B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nn54
(V)
10
2
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