PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN025-100D_3
Product data sheet
Symbol
Avalanche ruggedness
E
I
AS
Fig 1.
Fig 3.
DS(AL)S
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
Normalised Current Derating, ID (%)
Normalised Power Derating, PD (%)
mounting base temperature
function of mounting base temperature
Continuous drain current as a function of
Normalized total power dissipation as a
Limiting values
Parameter
non-repetitive
drain-source avalanche
energy
non-repetitive
avalanche current
25
25
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
50
50
75
75
…continued
100
100
Conditions
V
unclamped; t
V
unclamped; see
GS
sup
125
125
= 10 V; T
≤ 25 V; V
Rev. 03 — 20 November 2008
150
150
p
j(init)
GS
lma015
= 100 µs; R
lma016
Figure 4
= 10 V; T
175
175
= 25 °C; I
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
GS
j(init)
D
1000
100
= 50 Ω
0.1
100
= 40 A; V
10
10
= 25 °C; R
1
1
0.001
1
Peak Pulsed Drain Current, IDM (A)
Maximum Avalanche Current, I
RDS(on) = VDS/ ID
currents as a function of drain-source voltage
current as a function of avalanche time
Safe operating area; continuous and peak drain
Maximum permissible non-repetitive avalanche
Tj prior to avalanche = 150 C
sup
GS
≤ 25 V;
0.01
= 50 Ω;
Drain-Source Voltage, VDS (V)
Avalanche time, t
10
D.C.
PSMN025-100D
0.1
AS
(A)
Min
-
-
AV
(ms)
100
25 C
100 ms
© NXP B.V. 2008. All rights reserved.
100 us
1 ms
10 ms
tp = 10 us
1
Max
260
47
lma029
lma017
Unit
mJ
A
1000
10
3 of 11