BUK9518-55A,127 NXP Semiconductors, BUK9518-55A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9518-55A,127
• Description: MOSFET N-CH 55V 61A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9518-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056811127; BUK9518-55A; BUK9518-55A

Philips Semiconductors
9397 750 08461
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
function of gate-source voltage; typical values.
I D
(A)
= 25 V
= 0 V
50
40
30
20
10
0
0
T j = 175 ºC
1
2
T j = 25 ºC
3
V GS (V)
I S
100
(A)
80
60
40
20
0
0.0
4
Rev. 01 — 27 August 2001
0.2
T j = 175 ºC
BUK9518-55A; BUK9618-55A
0.4
0.6
Fig 14. Gate-source voltage as a function of turn-on
T
0.8
j
= 25 C; I
V GS
(V)
gate charge; typical values.
T j = 25 ºC
5
4
3
2
1
0
1.0
V SD (V)
0
D
1.2
5
= 25 A
V DD = 14 V
10
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
15
20
V DD = 44 V
25
30
Q G (nC)
35
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