BUK9518-55A,127 NXP Semiconductors, BUK9518-55A,127 Datasheet - Page 12

MOSFET N-CH 55V 61A SOT78

BUK9518-55A,127

Manufacturer Part Number
BUK9518-55A,127
Description
MOSFET N-CH 55V 61A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9518-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
136W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
61 A
Power Dissipation
136000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056811127
BUK9518-55A
BUK9518-55A
Philips Semiconductors
11. Revision history
Table 6:
9397 750 08461
Product data
Rev Date
01
20010827
Revision history
CPCN
-
Description
Product data; initial version
Rev. 01 — 27 August 2001
BUK9518-55A; BUK9618-55A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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