BUK9217-75B,118 NXP Semiconductors, BUK9217-75B,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9217-75B,118
• Description: MOSFET N-CH 75V 64A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9217-75B,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Mounting Type: Surface Mount
• Power - Max: 167W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 64A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 64 A
• Power Dissipation: 167000 mW
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057721118::BUK9217-75B /T3::BUK9217-75B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9217-75B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
δ = 0.5
−6
0.1
0.05
0.02
0.2
single shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 3 February 2011
−4
10
−3
Conditions
see
Figure 4
10
−2
N-channel TrenchMOS logic level FET
P
10
t
p
−1
T
t
BUK9217-75B
p
Min
-
-
δ =
(s)
03nk52
t
T
t
p
1
Typ
-
71.4
© NXP B.V. 2011. All rights reserved.
Max
0.95
-
Unit
K/W
K/W
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