BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 5
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9510-55A,127
Manufacturer Part Number
BUK9510-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9510-55A127.pdf
(14 pages)
Specifications of BUK9510-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
68nC @ 5V
Input Capacitance (ciss) @ Vds
4307pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
139 ns
Minimum Operating Temperature
- 55 C
Rise Time
155 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056851127
BUK9510-55A
BUK9510-55A
BUK9510-55A
BUK9510-55A
Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08555
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
D
DS
GS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 10 V; I
= 5 V; V
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 20 August 2001
and
Figure 14
Figure 12
BUK9510-55A; BUK9610-55A
D
DS
DD
DS
G
D
8
= 25 A
D
GS
L
= 10
= 25 A
DS
= V
= 25 A
GS
= 44 V;
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
Min
55
50
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
-
-
1.5
-
-
0.05
-
2
8
-
-
7
68
8
28
3200
740
490
30
155
192
139
4.5
3.5
2.5
7.5
Max
-
-
2
-
2.3
10
500
100
10
20
11
9
-
-
-
4307
888
680
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 14
A
A