BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 11

• Manufacturer Part Number: BUK9510-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9510-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 139 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056851127; BUK9510-55A; BUK9510-55A

Philips Semiconductors
10. Soldering
9397 750 08555
Product data
Fig 18. Reflow soldering footprint for SOT404.
Dimensions in mm.
handbook, full pagewidth
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
MSD057
0.20
5.40
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.275
8.075
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