BUK7208-40B,118 NXP Semiconductors, BUK7208-40B,118 Datasheet - Page 9
![MOSFET N-CH 40V 75A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK7208-40B,118
Manufacturer Part Number
BUK7208-40B,118
Description
MOSFET N-CH 40V 75A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7208-40B118.pdf
(14 pages)
Specifications of BUK7208-40B,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
167W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057607118::BUK7208-40B /T3::BUK7208-40B /T3
NXP Semiconductors
BUK7208-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
S
100
75
50
25
V
0
30
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 32 V
G
(nC)
03nl37
40
0.3
Rev. 03 — 7 June 2010
T
T
j
= 185 °C
j
= 25 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
3000
2000
1000
0.9
0
10
as a function of drain-source voltage; typical
values
−1
V
N-channel TrenchMOS standard level FET
SD
03nl36
(V)
1.2
1
C
C
C
rss
iss
oss
BUK7208-40B
10
V
© NXP B.V. 2010. All rights reserved.
DS
(V)
03nl43
10
2
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