BUK7208-40B,118 NXP Semiconductors, BUK7208-40B,118 Datasheet - Page 6
![MOSFET N-CH 40V 75A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK7208-40B,118
Manufacturer Part Number
BUK7208-40B,118
Description
MOSFET N-CH 40V 75A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7208-40B118.pdf
(14 pages)
Specifications of BUK7208-40B,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
167W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057607118::BUK7208-40B /T3::BUK7208-40B /T3
NXP Semiconductors
6. Characteristics
Table 6.
BUK7208-40B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
die ; T
source bond pad ; T
I
see
I
V
D
D
D
D
D
D
S
S
measured from drain to centre of
measured form source lead to
j
j
DS
DS
DS
DS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 17 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 15
= 40 V; V
= 40 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
Rev. 03 — 7 June 2010
j
= 10 Ω; T
= 25 °C
11; see
11; see
GS
DS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs;
GS
GS
L
DS
= 25 A; T
= 25 A; T
= 32 V; V
= 0 V; T
= V
= V
= V
= 1.2 Ω; V
GS
GS
= 20 V; T
= -20 V; T
Figure 13
= 25 V; f = 1 MHz;
Figure 14
j
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
j
= 25 °C
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 25 °C;
= -55 °C;
= 185 °C;
= 185 °C;
= 25 °C;
j
GS
= 185 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 10 V;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
N-channel TrenchMOS standard level FET
BUK7208-40B
Min
40
36
2
-
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.02
2
2
-
6.6
35
9.8
11.5
1870
482
201
16
104
47
51
2.5
7.5
0.85
50
36
© NXP B.V. 2010. All rights reserved.
-
578
-
Max
-
-
4
4.4
-
500
1
100
100
15.6
8
-
-
2493
275
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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