PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet - Page 7

• Manufacturer Part Number: PHP45NQ11T,127
• Description: MOSFET N-CH 105V 47A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP45NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 105V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 105 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058294127::PHP45NQ11T::PHP45NQ11T

NXP Semiconductors
PHP45NQ11T_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
DSon
V
(V)
0.15
0.05
GS
0.2
0.1
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
V
4
D
j
DD
= 45 A
= 25 °C
4.2
= 80 V
4.4
20
5
4.6
10
40
4.8
15
60
T
V
j
GS
Q
= 25 °C
G
(V) =
I
03am91
D
03am95
(nC)
(A)
Rev. 02 — 19 November 2009
10
5
20
80
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS standard level FET
0
1
60
PHP45NQ11T
10
120
© NXP B.V. 2009. All rights reserved.
V
DS
T
j
C
C
C
(°C)
03am94
(V)
03al21
iss
oss
rss
180
10
2
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