PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet - Page 3

• Manufacturer Part Number: PHP45NQ11T,127
• Description: MOSFET N-CH 105V 47A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP45NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 105V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 105 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058294127::PHP45NQ11T::PHP45NQ11T

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHP45NQ11T_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
GS
GS
GS
GS
150
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
T
= 50 Ω; t
mb
03aa24
(°C)
Rev. 02 — 19 November 2009
200
j
p
≤ 175 °C
j
mb
mb
j(init)
≥ 25 °C; R
= 120 µs; unclamped
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 18 A; V
P
Figure 1
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
N-channel TrenchMOS standard level FET
and
sup
≤ 100 V;
3
50
100
PHP45NQ11T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
105
105
20
33
47
188
150
175
175
47
188
160
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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