BUK9219-55A,118 NXP Semiconductors, BUK9219-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2920pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0176 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056240118; BUK9219-55A /T3; BUK9219-55A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9219-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9219-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
DPAK
Symbol
Static characteristics
R
Avalanche ruggedness
E
DS(AL)S
DSon
Quick reference data
Parameter
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 June 2010
Simplified outline
Conditions
V
T
see
V
T
see
V
T
see
I
R
T
SOT428 (DPAK)
D
…continued
j
j
j
j(init)
GS
GS
GS
GS
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 49 A; V
Figure 13
Figure 13
Figure 13
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
D
3
sup
D
= 25 A;
D
GS
= 25 A;
≤ 55 V;
= 25 A;
Figure
Figure
Figure
= 5 V;
N-channel TrenchMOS logic level FET
12;
12;
12;
Graphic symbol
BUK9219-55A
mbb076
G
Min
-
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
14
15
-
Version
SOT428
Max Unit
20
17.6 mΩ
19
120
2 of 14
mΩ
mΩ
mJ