BUK9675-55A,118 NXP Semiconductors, BUK9675-55A,118 Datasheet - Page 7
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BUK9675-55A,118
Manufacturer Part Number
BUK9675-55A,118
Description
MOSFET N-CH 55V 20A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Specifications of BUK9675-55A,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
643pF @ 25V
Power - Max
62W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.068 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
20 A
Power Dissipation
62000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056269118
BUK9675-55A /T3
BUK9675-55A /T3
BUK9675-55A /T3
BUK9675-55A /T3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9675-55A,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
9397 750 07831
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
junction temperature.
drain current; typical values.
V GS(th)
(V)
g fs
(S)
15
10
2.5
1.5
0.5
5
0
2
1
0
0
-60
DS
DS
= V
= 25 V
-20
5
GS
20
10
max
min
typ
60
15
100
20
140
I D (A)
T j ( o C)
03aa33
25
180
Rev. 01 — 9 February 2001
BUK9575-55A; BUK9675-55A
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
gate-source voltage.
C (pF)
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
(A)
I D
1200
1000
800
600
400
200
0
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10 -2
0
DS
= V
0.5
10 -1
GS
TrenchMOS™ logic level FET
1
min
1
1.5
© Philips Electronics N.V. 2001. All rights reserved.
typ
2
10
max
V GS (V)
V DS (V)
2.5
03aa36
10 2
Coss
Crss
Ciss
3
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