BUK9237-55A/C1,118 NXP Semiconductors, BUK9237-55A/C1,118 Datasheet - Page 7

• Manufacturer Part Number: BUK9237-55A/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9237-55A/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 17.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 1236pF @ 25V
• Power - Max: 77W
• Mounting Type: Surface Mount
• Gate Charge Qg: 17.6 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 38 mOhms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 32 A
• Power Dissipation: 77 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Other names: 934061634118

NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
40
30
20
10
70
60
50
40
30
20
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
= 3 V
20
1
T
j
= 175 °C
3.2 3.4
40
2
3.6 3.8
T
j
= 25 °C
4
60
3
All information provided in this document is subject to legal disclaimers.
V
I
GS
D
(A)
03na91
03na97
(V)
10
5
Rev. 3 — 9 November 2010
80
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9237-55A
60
60
max
typ
min
120
120
© NXP B.V. 2010. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
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