BUK9237-55A/C1,118 NXP Semiconductors, BUK9237-55A/C1,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9237-55A/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9237-55A/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 17.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 1236pF @ 25V
• Power - Max: 77W
• Mounting Type: Surface Mount
• Gate Charge Qg: 17.6 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 38 mOhms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 32 A
• Power Dissipation: 77 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Other names: 934061634118

NXP Semiconductors
BUK9237-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
8
10
1
min
4
typ
6
2
V
GS
max
= 6 V
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
DS
(V)
03na96
2.2
4
3
5
(V)
Rev. 3 — 9 November 2010
10
3
Fig 6.
Fig 8.
(A)
g
(S)
I
S
fs
100
80
60
40
20
25
20
15
10
0
5
0
diode voltage; typical values
drain current; typical values
Reverse diode current as a function of reverse
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
0.2
10
T
j
= 175 °C
0.4
BUK9237-55A
20
0.6
30
© NXP B.V. 2010. All rights reserved.
0.8
T
j
I
= 25 °C
V
D
SD
(A)
03ne94
03na95
(V)
1.0
40
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