PHD9NQ20T,118 NXP Semiconductors, PHD9NQ20T,118 Datasheet - Page 3

• Manufacturer Part Number: PHD9NQ20T,118
• Description: MOSFET N-CH 200V 8.7A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD9NQ20T,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055766118; PHD9NQ20T /T3; PHD9NQ20T /T3

NXP Semiconductors
PHD9NQ20T
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
DS(on)
= 25 °C; I
= V
50
DS
10
DM
/ I
D
D.C.
is single pulse
100
10
2
150
V
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
All information provided in this document is subject to legal disclaimers.
DS
T
003aae674
003aae676
mb
(V)
(°C)
Rev. 03 — 16 December 2010
200
10
3
Fig 2.
Fig 4.
(%)
l
(A)
I
AS
10
D
100
80
60
40
20
10
−1
0
1
10
function of mounting base temperature
current as a function of avalanche period
Normalized continuous drain current as a
unclamped inductive load
Single-shot avalanche rating; avalanche
0
−3
N-channel TrenchMOS standard level FET
T
j
prior to avalanche = 150 °C
10
50
−2
10
100
−1
PHD9NQ20T
150
1
© NXP B.V. 2010. All rights reserved.
25 °C
T
t
AV
003aae675
003aae688
mb
(ms)
(°C)
200
10
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