PHD9NQ20T,118 NXP Semiconductors, PHD9NQ20T,118 Datasheet

MOSFET N-CH 200V 8.7A SOT428

PHD9NQ20T,118

Manufacturer Part Number
PHD9NQ20T,118
Description
MOSFET N-CH 200V 8.7A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHD9NQ20T,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
959pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
88000 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055766118
PHD9NQ20T /T3
PHD9NQ20T /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHD9NQ20T
N-channel TrenchMOS standard level FET
Rev. 03 — 16 December 2010
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
General purpose switching
Motor control circuits
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
T
V
T
V
V
j
mb
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C; V
= 25 °C
= 10 V; I
= 10 V; I
= 160 V; T
j
Suitable for high frequency
applications due to fast switching
characteristics
Off-line switched-mode power
supplies
TV and computer monitor power
supplies
D
D
≤ 175 °C
GS
= 4.5 A;
= 9 A;
j
= 25 °C
= 10 V
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
300
12
Max Unit
200
8.7
88
400
-
V
A
W
mΩ
nC

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PHD9NQ20T,118 Summary of contents

Page 1

PHD9NQ20T N-channel TrenchMOS standard level FET Rev. 03 — 16 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate [ drain 3 S source mb D mounting base; connected to drain [ not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name PHD9NQ20T DPAK 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) ...

Page 3

... NXP Semiconductors 100 P der (%) 100 Fig 1. Normalized total power dissipation as a function of mounting base temperature ( DS(on D. ° single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHD9NQ20T Product data sheet 003aae674 100 I D (%) ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PHD9NQ20T Product data sheet Conditions mounted on printed-circuit board ; ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors ( ( 0.4 0 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values ( > DSon Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values 2.9 a 2.1 1.3 0.5 −60 20 Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...

Page 7

... NXP Semiconductors − (A) −2 10 −3 10 minimum −4 10 −5 10 − ° Fig 12. Sub-threshold drain current as a function of gate-source voltage ( ° Fig 14. Gate-source voltage as a function of gate charge; typical values PHD9NQ20T Product data sheet 003aae684 typical maximum (V) GS Fig 13. Input, output and reverse transfer capacitances ...

Page 8

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 1.1 mm 2.22 0.46 0.71 0.9 OUTLINE VERSION IEC SOT428 Fig 16. Package outline SOT428 (DPAK) PHD9NQ20T Product data sheet mounting ...

Page 9

... Data sheet status Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHD9NQ20T separated from data sheet PHB_PHD_PHP9NQ20T v.2. ...

Page 10

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Legal information .10 9.1 Data sheet status ...

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