PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet - Page 4

• Manufacturer Part Number: PSMN038-100K,518
• Description: MOSFET N-CH 100V 6.3A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN038-100K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056595518; PSMN038-100K /T3; PSMN038-100K /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07897
Product specification
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
T
sp
= 25 C
thermal resistance from junction to solder
point
Thermal characteristics
7.1 Transient thermal impedance
Z
(K/W)
10 -1
10 -2
th(j-sp)
10 2
10
1
10 -4
0.2
0.1
0.05
0.02
single pulse
= 0.5
10 -3
Rev. 01 — 16 January 2001
10 -2
Conditions
mounted on a metal clad substrate;
10 -1
N-channel enhancement mode field-effect transistor
1
P
t p
10
PSMN038-100K
T
t
p
(s)
=
03ad96
Figure 4
t p
T
t
© Philips Electronics N.V. 2001. All rights reserved.
10 2
Value Unit
20
4 of 13
K/W