PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet - Page 3

• Manufacturer Part Number: PSMN038-100K,518
• Description: MOSFET N-CH 100V 6.3A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN038-100K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056595518; PSMN038-100K /T3; PSMN038-100K /T3

Philips Semiconductors
9397 750 07897
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
=
P der
(%)
120
100
80
60
40
20
----------------------
P
0
tot 25 C
P
0
tot
DM
25
is single pulse
100%
50
10 -1
10 -2
10 2
(A)
10
I
D
1
10 -1
75
R
DSon
P
100
= V
t p
DS
T
125
/ I
D
T sp ( o C)
=
150
t p
T
t
03aa17
1
175
Rev. 01 — 16 January 2001
D.C.
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
10
V
I
der
GS
function of solder point temperature.
(%)
=
I der
5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
10 2
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
25
100%
03ad97
V
50
PSMN038-100K
DS
(V)
75
© Philips Electronics N.V. 2001. All rights reserved.
10 3
100
125
T sp ( o C)
150
03aa25
175
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