BUK95150-55A,127 NXP Semiconductors, BUK95150-55A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK95150-55A,127
• Description: MOSFET N-CH 55V 13A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK95150-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 339pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056260127; BUK95150-55A; BUK95150-55A

Philips Semiconductors
February 2000
TrenchMOS
Logic level FET
ID/A
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
33
32
31
30
29
28
27
26
25
24
23
22
40
35
30
25
20
100
3
90
80
70
60
50
40
30
20
10
0
RDS(ON)/mOhm
RDS(ON)/mOhm
0
VGS/V=
0
R
3.4
3.6
3.0
3.2
4.0
5.0
DS(ON)
10
4
R
I
DS(ON)
D
= f(V
= f(V
2
20
5
= f(I
GS
transistor
DS
10.0
); conditions: I
); parameter V
D
30
6
); parameter V
4
ID/A
ID/A
VDS/V
40
7
6
50
8
D
GS
VGS/V =
= 13 A;
GS
j
j
j
60
= 25 ˚C.
= 25 ˚C.
8
9
= 25 ˚C.
7.5
70
10
6.5
6.0
5.5
5.0
4.8
4.4
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
7.0
10
4
Fig.10. Normalised drain-source on-state resistance.
gfs/S
ID/A
I
a = R
D
Fig.9. Typical transconductance, T
2.5
1.5
0.5
70
60
50
40
30
20
10
= f(V
25
20
15
10
0
5
0
3
2
1
Fig.8. Typical transfer characteristics.
-100
0
0
DS(ON)
a
GS
g
) ; conditions: V
fs
/R
5
1
= f(I
-50
DS(ON)25 ˚C
D
); conditions: V
10
Tj/C= 175
2
0
= f(T
15
Tmb / degC
o
3
C
ID/A
50
VGS/V
DS
Rds(on) normalised to 25degC
j
); I
= 25 V; parameter T
20
D
4
BUK95150-55A
BUK96150-55A
100
= 25 A; V
DS
Product specification
25
= 25 V
25
o
C
5
150
j
= 25 ˚C.
30
GS
6
Rev 1.000
= 5 V
200
35
j
7