BUK95150-55A,127 NXP Semiconductors, BUK95150-55A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK95150-55A,127
• Description: MOSFET N-CH 55V 13A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK95150-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 339pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056260127; BUK95150-55A; BUK95150-55A

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
February 2000
TrenchMOS
Logic level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
C
C
C
t
t
t
t
L
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
d
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
V
V
V
CONDITIONS
V
V
V
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
CONDITIONS
I
I
I
V
F
F
F
GS
DS
DS
GS
GS
GS
GS
GS
DD
GS
GS
= 25 A; V
= 53 A; V
= 53 A; -dI
= V
= 55 V; V
= 0 V; I
= 10 V; V
= 5 V; I
= 10 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 5 V; R
= -10 V; V
GS
; I
2
D
D
D
GS
GS
DS
G
D
F
= 0.25 mA;
= 1 mA
= 13 A
D
GS
/dt = 100 A/ s;
load
= 10
= 0 V
= 0 V
= 13 A
R
DS
= 25 V; f = 1 MHz
= 13 A
= 30 V
= 0 V;
=1.2 ;
= 0 V
T
T
T
T
T
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
0.5
55
50
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.026
TYP.
TYP.
TYP.
0.05
0.85
125
116
124
254
285
1.5
4.5
3.5
2.5
7.5
1.1
BUK95150-55A
BUK96150-55A
54
42
18
24
2
6
1
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
500
100
150
300
137
161
339
428
2.0
2.3
1.4
1.2
10
65
58
25
13
53
6
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
m
m
nH
nH
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
V
C
A
A