BUK7225-55A,118 NXP Semiconductors, BUK7225-55A,118 Datasheet - Page 8
![MOSFET N-CH 55V 43A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK7225-55A,118
Manufacturer Part Number
BUK7225-55A,118
Description
MOSFET N-CH 55V 43A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7225-55A118.pdf
(13 pages)
Specifications of BUK7225-55A,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1310pF @ 25V
Power - Max
94W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
43 A
Power Dissipation
94000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056703118
BUK7225-55A /T3
BUK7225-55A /T3
BUK7225-55A /T3
BUK7225-55A /T3
NXP Semiconductors
BUK7225-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
1.5
0.5
a
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
03ne89
( ° C)
180
Rev. 2 — 23 February 2011
0.5
T
j
= 175 °C
Fig 14. Input and reverse transfer capacitances as a
C
C
C
(pF)
oss
iss
rss
1.0
,
,
2000
1600
1200
800
400
T
j
0
10
= 25 °C
function of gate-source voltage; typical values
V
−2
SD
N-channel TrenchMOS standard level FET
(V)
03nb66
C
C
C
iss
oss
rss
1.5
10
−1
BUK7225-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nb73
(V)
10
2
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