BUK7225-55A,118 NXP Semiconductors, BUK7225-55A,118 Datasheet - Page 3
![MOSFET N-CH 55V 43A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK7225-55A,118
Manufacturer Part Number
BUK7225-55A,118
Description
MOSFET N-CH 55V 43A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7225-55A118.pdf
(13 pages)
Specifications of BUK7225-55A,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1310pF @ 25V
Power - Max
94W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
43 A
Power Dissipation
94000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056703118
BUK7225-55A /T3
BUK7225-55A /T3
BUK7225-55A /T3
BUK7225-55A /T3
NXP Semiconductors
BUK7225-55A
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
10
D
10
1
3
2
1
P
100
t
p
T
R
δ =
150
DSon
t
T
t
p
All information provided in this document is subject to legal disclaimers.
T
mb
= V
03aa24
(°C)
DS
/ I
Rev. 2 — 23 February 2011
200
D
10
Fig 2.
D.C.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
BUK7225-55A
= 10 μs
100
03ne70
10
2
150
© NXP B.V. 2011. All rights reserved.
T
mb
03aa16
(°C)
200
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