BSP130,115 NXP Semiconductors, BSP130,115 Datasheet - Page 7

• Manufacturer Part Number: BSP130,115
• Description: MOSFET N-CH 300V 350MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP130,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 300V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934023500115::BSP130 T/R::BSP130 T/R

Philips Semiconductors
2001 Dec 11
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
Typical R
(1) I
(2) I
Fig.12 Temperature coefficient of drain-source
k
=
D
D
1.5
0.5
k
-----------------------------------------
R
= 250 mA; V
= 20 mA; V
2
1
0
R
DS(on)
50
DS(on)
DSon
on-state resistance; typical values.
at 25 C
;
at T
GS
GS
j
= 2.4 V.
0
= 10 V.
50
100
(1)
(2)
T j ( C)
MLD771
150
7
handbook, halfpage
Typical V
Fig.13 Temperature coefficient of gate-source
k
1.25
0.75
0.25
=
0.5
k
-------------------------------------------.
V
1
0
-50
GS th
V
GS th
GSth
threshold voltage; typical values.
at 25 C
at 1 mA.
at T
j
0
50
Product specification
100
T j ( C)
BSP130
MLD772
150