BSP130,115 NXP Semiconductors, BSP130,115 Datasheet - Page 5

• Manufacturer Part Number: BSP130,115
• Description: MOSFET N-CH 300V 350MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP130,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 300V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934023500115::BSP130 T/R::BSP130 T/R

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
T
R DSon
Fig.8
j
T
= 25 C.
( )
j
= 25 C.
(A)
1.2
I D
0.8
0.4
30
20
10
0
0
10
0
Fig.6 Typical output characteristics.
1
Drain-source on-state resistance as a
function of drain current; typical values.
V GS = 10 V
V GS = 2 V
4
2.5 V
1
5 V
4 V
3.5 V
3 V 3.5 V
8
10 V
4 V
5 V
I D (A)
V DS (V)
2.5 V
3 V
2 V
MLD766
MLD768
12
10
5
handbook, halfpage
handbook, halfpage
Fig.9
V
V
R DSon
DS
DS
( )
(A)
1.2
I D
0.8
0.4
= 10 V; T
= 100 mV; T
20
15
10
0
5
0
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
0
Fig.7 Typical transfer characteristics.
j
= 25 C.
j
= 25 C.
2
2
4
4
6
6
Product specification
8
8
V GS (V)
V GS (V)
BSP130
MLD767
MLD769
10
10