BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9275-100A,118
• Description: MOSFET N-CH 100V 21.7A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9275-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 21.7 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056253118; BUK9275-100A /T3; BUK9275-100A /T3

NXP Semiconductors
BUK9275-100A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
50
40
30
20
10
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
( ° C)
03aa29
0.3
180
Rev. 03 — 15 June 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
0.9
(pF)
3000
2500
2000
1500
1000
C
500
T
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
1.2
−2
V
SD
C
C
C
03na72
iss
oss
rss
(V)
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9275-100A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na78
(V)
10
2
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