BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9275-100A,118
• Description: MOSFET N-CH 100V 21.7A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9275-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 21.7 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056253118; BUK9275-100A /T3; BUK9275-100A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9275-100A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9275-100A
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
gate
drain
source
mounting base; connected to
drain
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Conditions
T
R
T
see
T
T
see
T
pulsed; t
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 14 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
Rev. 03 — 15 June 2010
≤ 50 µs
Simplified outline
sup
j(init)
j
≤ 175 °C
p
GS
≤ 100 V; R
≤ 10 µs; pulsed;
GS
SOT428 (DPAK)
= 25 °C; unclamped
Figure 2
= 5 V; see
= 5 V; see
mb
1
= 25 °C
mb
2
GS
3
Figure
= 50 Ω;
Figure 1
1;
N-channel TrenchMOS logic level FET
Graphic symbol
[1]
BUK9275-100A
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
mbb076
G
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
175
Version
SOT428
Max
100
100
10
21.7
15.3
87
88
175
15
21.7
87
100
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
2 of 13