BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 3

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
ID% = 100 I
DSS
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
PD% = 100 P
20
20
D
/I
D 25 ˚C
40
40
transistor
= f(T
60
60
Tmb / C
sp
D
Tmb / C
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
100
100
= f(T
sp
120
120
)
GS
140
140
CONDITIONS
I
V
D
10 V
GS
= 2.5 A; V
= 10 V; R
3
DD
GS
= 50 ; T
25 V;
ID/A
100
0.1
I
0.01
10
100
D
0.1
1
10
RDS(ON) = VDS/ID
1
1
& I
Fig.3. Safe operating area. T
Zth/ (K/W)
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
0.05
0.02
DM
1.0E-06
sp
Z
= f(V
th j-sp
= 25 ˚C
DS
DC
= f(t); parameter D = t
); I
0.0001
DM
MIN.
single pulse; parameter t
t/s
-
10
0.01
TYP.
VDS/V
P
D
-
Product specification
t
p
BUK7880-55
sp
T
1
= 25 ˚C
p
MAX.
/T
D =
30
t
T
p
t
Rev 1.100
tp =
1 us
100 us
10ms
100ms
10us
1 ms
100
UNIT
mJ
100
p