BUK98150-55A,135 NXP Semiconductors, BUK98150-55A,135 Datasheet - Page 7
![MOSFET N-CH 55V 5.5A SOT-223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BUK98150-55A,135
Manufacturer Part Number
BUK98150-55A,135
Description
MOSFET N-CH 55V 5.5A SOT-223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK98150-55A135.pdf
(13 pages)
Specifications of BUK98150-55A,135
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
137 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
5.3nC @ 5V
Input Capacitance (ciss) @ Vds
320pF @ 25V
Power - Max
8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.137 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
5 A
Power Dissipation
8000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056193135
BUK98150-55A /T3
BUK98150-55A /T3
BUK98150-55A /T3
BUK98150-55A /T3
NXP Semiconductors
BUK98150-55A_4
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
2.5
1.5
0.5
(S)
g
fs
2
1
0
6
4
2
0
I
junction temperature
T
drain current; typical values
-60
D
0
j
= 1 mA; V
= 25 C; V
2
0
DS
DS
= V
= 25 V
GS
4
60
max
typ
min
6
120
8
T
03aa33
003aab634
j
I
( C)
D
(A)
180
10
Rev. 04 — 11 June 2007
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
10
I
10
10
10
10
10
(pF)
D
600
400
200
C
-1
-2
-3
-4
-5
-6
0
10
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
-2
= 25 C; V
= 0 V; f = 1 MHz
C
C
C
oss
N-channel TrenchMOS logic level FET
iss
rss
10
DS
-1
= V
1
min
BUK98150-55A
GS
1
typ
2
max
10
© NXP B.V. 2007. All rights reserved.
V
GS
V
03aa36
003aab635
DS
(V)
(V)
10
3
2
7 of 13