BUK98150-55A,135 NXP Semiconductors, BUK98150-55A,135 Datasheet - Page 5

• Manufacturer Part Number: BUK98150-55A,135
• Description: MOSFET N-CH 55V 5.5A SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK98150-55A,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 320pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 8000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056193135; BUK98150-55A /T3; BUK98150-55A /T3

NXP Semiconductors
6. Characteristics
Table 5:
T
BUK98150-55A_4
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
V
V
V
V
I
see
V
see
V
V
I
I
V
D
D
D
S
S
DS
GS
GS
GS
GS
GS
DS
GS
GS
T
T
T
T
T
T
T
T
T
= 5 A; V
= 5 A; dI
= 250 A; V
= 1 mA; V
= 5 A; V
j
j
j
j
j
j
j
j
j
Figure 14
Figure 12
= 55 V; V
= 15 V; V
= 5 V; I
= 4.5 V; I
= 10 V; I
= 0 V; V
= 20 V; R
= 5 V; R
= 10 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 04 — 11 June 2007
GS
DD
S
D
/dt = 100 A/ s;
DS
DS
G
D
= 5 A; see
= 0 V; see
D
= 44 V; V
GS
L
GS
= 10
= 5 A
DS
R
= V
= 5 A
= 3.3 ;
= 25 V; f = 1 MHz;
= 0 V
= 30 V
= 0 V
= 0 V
GS
; see
GS
Figure 15
Figure 7
= 5 V;
Figure 9
and
N-channel TrenchMOS logic level FET
8
BUK98150-55A
Min
55
50
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
128
-
-
116
5.3
1
2.8
240
53
25
8
57
16
13
0.85
24
30
© NXP B.V. 2007. All rights reserved.
Max
-
-
2
-
2.3
10
500
100
150
276
161
137
-
-
-
320
64
34
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 13
A
A