BSH201,215 NXP Semiconductors, BSH201,215 Datasheet - Page 3

• Manufacturer Part Number: BSH201,215
• Description: MOSFET P-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSH201,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 417mW
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 3nC @ 10V
• Vgs(th) (max) @ Id: 1.9V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 160mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054717215::BSH201 T/R::BSH201 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
ID% = 100 I
120
100
120
100
0.001
80
60
40
20
80
60
40
20
0.01
I
0
0
0.1
Fig.2. Normalised continuous drain current.
10
D
1
0
0
& I
Normalised Power Dissipation, PD (%)
Normalised Drain Current, ID (%)
1
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
Fig.1. Normalised power dissipation.
RDS(on) = VDS/ ID
DM
= f(V
25
25
PD% = 100 P
D
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
Ambient Temperature, Ta (C)
Ambient Temperature, Ta (C)
); I
50
50
10
= f(T
DM
d.c.
single pulse; parameter t
a
D
); conditions: V
75
75
/P
D 25 ˚C
tp = 10us
100 us
1 ms
10 ms
100 ms
100
100
100
= f(T
a
= 25 ˚C
a
)
125
125
GS
BSH201
-10 V
1000
150
150
p
3
1000
-0.8
-0.6
-0.4
-0.2
10
Fig.5. Typical output characteristics, T
100
9
8
7
6
5
4
3
2
1
0
0.1
-1
Fig.6. Typical on-state resistance, T
10
0
1
1E-06
0
Drain-Source On Resistance, RDS(on) (Ohms)
0
-1.5 V
Drain current, ID (A)
Peak Pulsed Drain Current, IDM (A)
Tj = 25 C
D = 0.5
0.1
0.02
single pulse
Fig.4. Transient thermal impedance.
0.05
1E-05
0.2
Z
-1.7 V
-0.1
R
th j-a
I
DS(ON)
-0.5
D
Drain-Source Voltage, VDS (V)
= f(V
Drain Current, ID (A)
1E-04
= f(t); parameter D = t
-1.9 V
= f(I
DS
-0.2
Pulse width, tp (s)
1E-03
); parameter V
D
); parameter V
-1
-2.1 V
1E-02
-0.3
PHP222
VGS = -10 V
P
Product specification
-2.3 V
D
-1.5
1E-01
-2.5 V
-2.1 V
-1.7 V
GS
-0.4
tp
-2.5 V
VGS = -10 V
p
GS
BSH201
T
/T
-4.5 V
-1.5 V
Tj = 25 C
-2.3 V
j
1E+00 1E+01
-1.9 V
D = tp/T
= 25 ˚C .
j
-4.5 V
= 25 ˚C .
BSH201
-2
Rev 1.000
-0.5