PMBF170,235 NXP Semiconductors, PMBF170,235 Datasheet - Page 8

• Manufacturer Part Number: PMBF170,235
• Description: MOSFET N-CH TRENCH 60V SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMBF170,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933966340235

Philips Semiconductors
9397 750 07208
Product specification
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
T
j
= 25 C and 150 C; V
voltage; typical values.
Rev. 03 — 23 June 2000
I S (A)
GS
0.8
0.6
0.4
0.2
1
0
= 0 V
0
N-channel enhancement mode field-effect transistor
V GS = 0 V
0.2
0.4
V SD (V)
0.6
150
o
C
0.8
T j = 25
1
03aa08
o
C
1.2
© Philips Electronics N.V. 2000. All rights reserved.
PMBF170
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