PMBF170,235 NXP Semiconductors, PMBF170,235 Datasheet - Page 3

• Manufacturer Part Number: PMBF170,235
• Description: MOSFET N-CH TRENCH 60V SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMBF170,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933966340235

Philips Semiconductors
9397 750 07208
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
(%)
=
der
----------------------
P
tot 25 C
120
100
P
80
60
40
20
tot
0
DM
0
is single pulse.
25
100%
10 -2
(A)
10 -1
I D
10
50
1
1
P
75
T sp = 25 o C
t p
100
T
125
=
T sp ( o C)
R DSon = V DS / I D
t p
T
t
150
03aa17
175
Rev. 03 — 23 June 2000
D.C.
N-channel enhancement mode field-effect transistor
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of solder point temperature.
=
I
der
4.5 V
------------------ -
I
120
100
(%)
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
75
T sp ( o C)
03aa03
10 2
© Philips Electronics N.V. 2000. All rights reserved.
100
125
PMBF170
150
03aa25
175
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