IRFB17N50L Vishay, IRFB17N50L Datasheet - Page 5

• Manufacturer Part Number: IRFB17N50L
• Description: MOSFET N-CH 500V 16A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB17N50L; Q1082842

Document Number: 91098
S-81263-Rev. A, 21-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
Fig. 12a - Unclamped Inductive Test Circuit
8
4
0
0.001
25
0.01
0.1
0.00001
1
R
20 V
D = 0.50
G
V
DS
50
0.20
0.10
0.05
0.02
0.01
t
p
T C , Case Temperature (°C)
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
Driver
+
- V
125
A
DD
A
t , Rectangular Pulse Duration (sec)
150
0.001
IRFB17N50L, SiHFB17N50L
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
V
Notes:
DS
t
r
t
0.1
p
P DM
D.U.T.
Vishay Siliconix
R
t 1
D
t
d(off)
V
t 2
DS
t
f
+
-
www.vishay.com
V
DD
1
5