IRFB17N50L Vishay, IRFB17N50L Datasheet

MOSFET N-CH 500V 16A TO-220AB

IRFB17N50L

Manufacturer Part Number

IRFB17N50L

Description

MOSFET N-CH 500V 16A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRFB17N50L.pdf (8 pages)

2.IRFB17N50L.pdf (9 pages)

3.IRFB17N50L.pdf (9 pages)

Specifications of IRFB17N50L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

320 mOhm @ 9.9A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

2760pF @ 25V

Power - Max

220W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.32 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

16 A

Power Dissipation

220 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFB17N50L
Q1082842

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

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Part Number:

IRFB17N50L

Manufacturer:

IR

Quantity:

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Company:

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Bonase Electronics (HK) Co., Limited

Part Number:

IRFB17N50LPBF

Manufacturer:

ST

Quantity:

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Part Number:

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Part Number:

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Company:

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H&T Electronics

Part Number:

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Quantity:

70 000

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Download datasheet (177Kb)

Diode Characteristics

Features and Benefits

•

•

•

•

Applications

•

•

•

•

Absolute Maximum Ratings

I

I

I

P

V

dv/dt

T

T

Symbol

I

I

V

t

Q

I

t

D

D

DM

www.irf.com

S

SM

rr

RRM

on

D

GS

J

STG

SD

rr

@ T

@ T

@T

C

C

C

= 25°C

= 100°C

= 25°C

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Current

Forward Turn-On Time

Reverse Recovery Time

Reverse Recovery Charge

.

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

(1.6mm from case )

Parameter

Parameter

SMPS MOSFET

GS

GS

@ 10V

@ 10V

Min. Typ. Max. Units

–––

–––

–––

–––

–––

–––

–––

–––

Intrinsic turn-on time is negligible (turn-on is dominated by L

–––

–––

–––

170

220

470

810 1210

7.3

V

500V

250

330

710

1.5

16

64

11

DSS

nC

ns

V

A

-55 to + 150

HEXFET Power MOSFET

IRFB17N50L

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

T

T

T

T

Max.

220

± 30

300

1.8

J

J

J

J

J

16

11

64

10

10

R

= 25°C, I

= 25°C

= 125°C

= 25°C

= 125°C

DS(on)

0.28Ω

S

Conditions

= 16A, V

typ.

TO-220AB

di/dt = 100A/µs „

I

F

= 16A

GS

PD - 94084B

lbft.in(N.m)

= 0V „

G

Units

W/°C

V/ns

W

°C

A

V

S

16A

+L

I

D

D

S

D

)

1

1/5/05

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