IRFB17N50L Vishay, IRFB17N50L Datasheet - Page 3

• Manufacturer Part Number: IRFB17N50L
• Description: MOSFET N-CH 500V 16A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB17N50L; Q1082842

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
100
0.1
10
0.01
100
1
0.1
10
0.1
1
0.1
Top
Bottom
Bottom
Top
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
1
20 μs PULSE WIDTH
T J = 125 °C
20 μs PULSE WIDTH
T J = 25 °C
10
10
5.0 V
5.0 V
100
100
100
0.1
10
0.5
1.5
3.0
2.5
2.0
1.0
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
1
IRFB17N50L, SiHFB17N50L
4.0
- 60
I D = 16 A
Fig. 3 - Typical Transfer Characteristics
- 40
5.0
- 20
V GS , Gate-to-Source Voltage (V)
T J = 150 °C
T J , Junction Temperature
0
6.0
20 40
T J = 25 °C
7.0
60 80 100 120 140 160
V DS = 50 V
20 μs PULSE WIDTH
Vishay Siliconix
8.0
V GS = 10 V
9.0
www.vishay.com
10.0
3