SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110P06-07L-E3
• Description: MOSFET P-CH 60V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P06-07L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 8.8mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0069Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 110A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P06-07L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
14000
12000
10000
8000
6000
4000
2000
250
200
150
100
200
160
120
50
80
40
0
0
0
0
0
0
C
15
10
oss
V
2
V
GS
V
DS
DS
Output Characteristics
= 10 thru 5 V
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
30
I
20
D
C
Capacitance
rss
- Drain Current (A)
4
45
30
6
60
40
T
C
C
iss
= - 55 °C
8
75
50
4 V
3 V
125 °C
25 °C
90
10
60
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
200
160
120
80
40
20
16
12
0
8
4
0
0
0
0
V
I
D
50
DS
= 110 A
On-Resistance vs. Drain Current
20
= 30 V
1
100
V
Transfer Characteristics
Q
GS
g
- Gate-to-Source Voltage (V)
150
- Total Gate Charge (nC)
40
I
SUM110P06-07L
D
V
Gate Charge
GS
- Drain Current (A)
T
2
25 °C
C
200
= 4.5 V
= 125 °C
60
Vishay Siliconix
250
3
300
80
V
GS
- 55 °C
www.vishay.com
350
= 10 V
4
100
400
450
120
5
3