SUM110P06-08L Vishay Siliconix, SUM110P06-08L Datasheet

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SUM110P06-08L

Manufacturer Part Number
SUM110P06-08L
Description
P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
SUM110P06-08L-E3
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SUM110P06-08L-E3
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SUM110P06-08L-E3
0
Notes:
a.
b.
c.
d.
Document Number: 73045
S-41506—Rev. A, 09-Aug-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient PCB Mount
Junction-to-Case
J
V
Duty cycle v 1%.
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
Limited by package.
= 175_C)
DS
−60
−60
(V)
Ordering Information: SUM110P06-08L
d
d
0.0105 @ V
0.008 @ V
a
SUM110P06-08L—E3 (Lead (Pb)-Free)
b
G
Top View
TO-263
r
DS(on)
P-Channel 60-V (D-S) 175_C MOSFET
D
Parameter
Parameter
GS
GS
S
= −10 V
= −4.5 V
(W)
C
T
T
L = 0 1 mH
L = 0.1 mH
T
T
= 25_C UNLESS OTHERWISE NOTED)
C
A
C
C
= 125_C
= 25_C
= 25_C
= 25_C
I
New Product
D
−110
−110
(A)
b
d
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D New Package with Low Thermal Resistance
D 100% R
APPLICATIONS
D Automotive Such As
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
AS
D
D
D
D
− High-Side Switch
− Motor Drives
− 12-V Boardnet
G
stg
P-Channel MOSFET
g
Tested
S
D
SUM110P06-08L
−55 to 175
Vishay Siliconix
Limit
Limit
3.75
−110
−200
"20
272
0.55
−60
−75
−65
211
40
www.DataSheet4U.com
c
b
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM110P06-08L Summary of contents

Page 1

... DS DS(on) 0.008 @ V = − −60 −60 0.0105 @ V = −4 TO-263 Top View Ordering Information: SUM110P06-08L SUM110P06-08L—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage d d Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current a ...

Page 2

... SUM110P06-08L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 73045 S-41506—Rev. A, 09-Aug-04 New Product 0.020 25_C 0.016 125_C 0.012 0.008 0.004 0.000 SUM110P06-08L www.DataSheet4U.com Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C −55_C − Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUM110P06-08L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product ...

Page 5

... New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case −3 − Square Wave Pulse Duration (sec) SUM110P06-08L www.DataSheet4U.com Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse − Drain-to-Source Voltage (V) DS Notes: ...

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