SUM110P06-07L-E3 Vishay, SUM110P06-07L-E3 Datasheet

MOSFET P-CH 60V 110A D2PAK

SUM110P06-07L-E3

Manufacturer Part Number
SUM110P06-07L-E3
Description
MOSFET P-CH 60V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheet

Specifications of SUM110P06-07L-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
345nC @ 10V
Input Capacitance (ciss) @ Vds
11400pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0069 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
8.8mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0069Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
110A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110P06-07L-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110P06-07L-E3
Manufacturer:
ST
Quantity:
30 000
Part Number:
SUM110P06-07L-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 821
Part Number:
SUM110P06-07L-E3
Manufacturer:
ST
0
Part Number:
SUM110P06-07L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM110P06-07L-E3
0
Company:
Part Number:
SUM110P06-07L-E3
Quantity:
1 600
Company:
Part Number:
SUM110P06-07L-E3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
J
DS
= 175 °C)
- 60
(V)
Ordering Information: SUM110P06-07L
G
Top View
TO-263
0.0088 at V
0.0069 at V
D
d
S
r
DS(on)
SUM110P06-07L-E3 (Lead (Pb)-free)
P-Channel 60-V (D-S) 175 °C MOSFET
a
GS
GS
(Ω)
= - 4.5 V
= - 10 V
C
= 25 °C, unless otherwise noted
I
D
- 110
- 110
(A)
d
PCB Mount
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
b
b
G
P-Channel MOSFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
S
D
®
stg
Power MOSFET
- 55 to 175
SUM110P06-07L
Typical
Limit
- 110
- 240
375
± 20
3.75
- 60
- 95
- 75
281
0.4
40
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
mJ
COMPLIANT
°C
W
V
A
Available
1

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SUM110P06-07L-E3 Summary of contents

Page 1

... DS DS(on) 0.0069 0.0088 4 TO-263 Top View Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM110P06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 72439 S-80274-Rev. C, 11-Feb- 0.016 °C C 0.014 25 °C 0.012 0.010 125 °C 0.008 0.006 0.004 0.002 0.000 iss SUM110P06-07L Vishay Siliconix 200 160 120 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs ...

Page 4

... SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 ( °C A 0.01 0.1 1 100 T = 150 °C ...

Page 5

... Document Number: 72439 S-80274-Rev. C, 11-Feb-08 1000 100 10 1 0.1 0.1 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110P06-07L Vishay Siliconix Limited on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r is specified GS ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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