IRF9520 Vishay, IRF9520 Datasheet - Page 6
![MOSFET P-CH 100V 6.8A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9520
Manufacturer Part Number
IRF9520
Description
MOSFET P-CH 100V 6.8A TO-220AB
Manufacturer
Vishay
Specifications of IRF9520
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9520
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9520
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
IRF9520N
Manufacturer:
IR
Quantity:
62 993
Company:
Part Number:
IRF9520N
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF9520NL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF9520NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9520PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRF9520, SiHF9520
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91074_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
1000
800
600
400
200
0
25
V
DD
+
Starting T
-
= - 25 V
V
50
DD
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
150
Fig. 13b - Gate Charge Test Circuit
V
- 2.8 A
- 4.8 A
- 6.8 A
GS
Same type as D.U.T.
I
Current regulator
D
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
t
0.3 µF
p
I
G
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91074
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD