IRF9520 Vishay, IRF9520 Datasheet - Page 6

• Manufacturer Part Number: IRF9520
• Description: MOSFET P-CH 100V 6.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9520

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520

IRF9520, SiHF9520
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91074_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
1000
800
600
400
200
0
25
V
DD
+
Starting T
-
= - 25 V
V
50
DD
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
150
Fig. 13b - Gate Charge Test Circuit
V
- 2.8 A
- 4.8 A
- 6.8 A
GS
Same type as D.U.T.
I
Current regulator
D
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
t
0.3 µF
p
I
G
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91074
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD