IRF9520 Vishay, IRF9520 Datasheet - Page 4

• Manufacturer Part Number: IRF9520
• Description: MOSFET P-CH 100V 6.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9520

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520

IRF9520, SiHF9520
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91074_06
91074_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
900
750
600
450
300
150
20
16
12
8
4
0
0
10
0
I
0
D
= - 6.8 A
- V
DS ,
4
Q
G
V
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
DS
= - 20 V
8
V
C
C
C
V
GS
iss
rss
oss
DS
= 0 V, f = 1 MHz
= C
= C
= C
= - 50 V
10
12
gs
gd
ds
V
1
+ C
DS
+ C
C
C
C
= - 80 V
gd
iss
oss
rss
gd
For test circuit
see figure 13
This datasheet is subject to change without notice.
, C
16
ds
Shorted
20
91074_08
91074_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
10
1
-1
3
5
2
2
5
2
5
2
1
0
1.0
1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
DS
SD
Operation in this area limited
T
T
Single Pulse
2.0
5
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
J
= 175 °C
= 25 °C
175
10
25
°
by R
C
°
2
C
3.0
DS(on)
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91074
5
10
100
1
10
2
ms
4.0
ms
µs
2
V
GS
= 0 V
5
10
5.0
3