IRF9520 Vishay, IRF9520 Datasheet - Page 5

• Manufacturer Part Number: IRF9520
• Description: MOSFET P-CH 100V 6.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9520

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520

Document Number: 91074
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91074_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91074_11
25
10
0.1
10
-2
1
50
10
T
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 10a - Switching Time Test Circuit
10 %
90 %
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
IRF9520, SiHF9520
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
t
+ T
2
f
-
+
www.vishay.com
C
10
V
DD
5