IRFS11N50APBF Vishay, IRFS11N50APBF Datasheet - Page 6

• Manufacturer Part Number: IRFS11N50APBF
• Description: MOSFET N-CH 500V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRFS11N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFS11N50APBF

IRFS11N50A, SiHFS11N50A
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12d - Typical Drain-to-Source Voltage
Fig. 13b - Gate Charge Test Circuit
12 V
V
GS
Same type as D.U.T.
Current regulator
vs. Avalanche Current
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S10-2326-Rev. B, 18-Oct-10
Document Number: 91286
D.U.T.
I
D
+
-
V
DS