IRFS11N50APBF Vishay, IRFS11N50APBF Datasheet - Page 2

• Manufacturer Part Number: IRFS11N50APBF
• Description: MOSFET N-CH 500V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRFS11N50APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFS11N50APBF

IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
C
R
V
oss
t
t
C
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
thCS
DS
oss
oss
SD
thJC
thJA
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
GS
J
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
= 25 °C, I
T
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
J
= 400 V, V
= 25 °C, I
R
V
V
V
TYP.
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
0.50
V
DD
g
oss
DS
DS
GS
DS
-
-
= 9.1 , R
= 250 V, I
F
= V
= 500 V, V
while V
= 0 V, I
= 50 V, I
V
see fig. 10
V
= 11 A, dI/dt = 100 A/μs
GS
V
V
DS
V
S
GS
GS
GS
DS
I
DS
D
V
= 11 A, V
= ± 30 V
, I
= 25 V,
= 0 V,
DS
see fig. 6 and 13
= 11 A, V
= 0 V, T
= 400 V, f = 1.0 MHz
DS
D
= 1.0 V, f = 1.0 MHz
D
D
D
= 250 μA
= 0 V to 400 V
= 250 μA
D
I
is rising fom 0 to 80 % V
GS
= 22
D
= 6.6 A
= 11 A
b
= 6.6 A
D
= 0 V
GS
= 1 mA
J
G
DS
= 125 °C
= 0 V
= 400 V
b
MAX.
b
0.75
D
S
b
c
62
-
b
MIN.
500
2.0
6.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S10-2326-Rev. B, 18-Oct-10
.
Document Number: 91286
0.060
TYP.
1423
2000
208
510
8.1
3.4
55
97
14
35
32
28
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.52
250
770
4.0
1.5
5.1
S
25
52
13
18
11
44
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
ns
ns

S
A
V
V
V